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Effects of Additives in KOH Based Electrolytes on Cu ECMP

Published online by Cambridge University Press:  01 February 2011

Tae-Young Kwon ,
In-Kwon Kim  and
Jin-Goo Park
Tae-Young Kwon
Affiliation:
[email protected], Hanyang university, Division of Materials and Chemical Engineering, 1271, Sa 1-dong, Sangrok-gu, Ansan, Gyungki-do, 426-791, Korea, Ansna, N/A, Korea, Republic of
In-Kwon Kim
Affiliation:
[email protected], Hanyang university, Division of Materials and Chemical Engineering, 1271, Sa 1-dong, Sangrok-gu, Ansan, Gyungki-do, 426-791, Korea, Ansna, 426-791, Korea, Republic of
Jin-Goo Park
Affiliation:
[email protected], Hanyang university, Division of Materials and Chemical Engineering, 1271, Sa 1-dong, Sangrok-gu, Ansan, Gyungki-do, 426-791, Korea, Ansna, 426-791, Korea, Republic of
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Abstract

The purpose of this study was to characterize KOH based electrolytes and effects of additives on electro-chemical mechanical planarization. The electrochemical mechanical polisher was made to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat. Cu disk of 2 inch was used as a working electrode and Pt electroplated platen was used as a counter electrode. KOH was used as the electrolyte. H2O2 and citric acid were used as additives for the ECMP of Cu. In static and dynamic potentiodynamic measurements, the corrosion potential decreased and corrosion current increased as a function of KOH concentration. In dynamic state, different potentiodynamic curve was obtained when compared to the static state. The current density did not decrease in passivation region by mechanical polishing effect. The static etch and removal rate were measured as function of KOH concentration and applied voltage. In ECMP system, polishing was performed at 30 rpm and 1 psi. The removal rate was about 60 nm/min at 0.3 V when 5 wt% KOH was used. Also, the effect of additive was investigated in KOH based electrolyte on removal rates. As a result, The removal rate was increased to 350 nm/min when 5wt% KOH, 5vol% H2O2, 0.3 M citric acid were used.

Keywords

CMPCupassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C11-02
Copyright
Copyright © Materials Research Society 2007

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References

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