Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-05T09:15:30.276Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of a Passivation Over-Layer on Tile Mechanisms of Stress Relaxation in Continuous Films and Narrow Lines of Aluminum

Published online by Cambridge University Press:  15 February 2011

C. A. Paszkiet ,
M. A. Korhonen  and
Che-Yu Li
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
Get access

Abstract

Stress relaxation was studied in bare and nitride-covered continuous films and narrow lines of aluminum. The rate of relaxation in unpassivated metallizations is shown to be consistent with a dislocation-controlled mechanism. Relaxation in passivated lines appears to depend on grain boundary diffusion-controlled void growth. In passivated continuous films, two rate-controlling mechanisms appear to operate in sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 161
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Korhonen, M. A., Paszkiet, C. A., Black, R. D., and Li, Che-Yu. Stress relaxation of continuous film and narrow line metallizations of aluminum on silicon substrates. Scripta Metallurgica et Materialia, 24:2297–2302, 1990.Google Scholar
[2] Colgan, E. G., Li, C.-Y., and Mayer, J. W.. Void formation in thin Al films. Applied Physics Letters, 51(6):424–426, August 1987.Google Scholar
[3] Korhonen, M. A. and Paszkiet, Christine A.. X-ray determination of the residual stresses in thin aluminum films deposited on silicon substrates. Scripta Metallurgica, 23:1449–1454, 1989.Google Scholar
[4] Tönshoff, H. K., Brinksmeier, E., and Nölke, H. H.. Anwendung der Kreuzkorrelationsmethode zur rechnerunterstfitzten röntgenographischen eigenspannungsmessung. Zeitschrift fur Metallkunde, 72:349–354, 1981.Google Scholar
[5] Paszkiet, C. A.. The evolution of thermal stresses in thin, continuous films and in thin, narrow aluminum lines. Ph.D. Thesis in preparation.Google Scholar
[6] Taylor, A.. X-Ray Metallography. John Wiley and Sons, New York-London, 1961.Google Scholar
[7] Stone, D., LaFontaine, W.R., Alexopoulos, P., Wu, T.-W., and Li, Che-Yu. An investigation of hardness and adhesion of sputter-deposited aluminum on silicon by utilizing a continuous indentation test. Journal of Materials Research, 3(1):141–147, Jan/Feb 1988.Google Scholar
[8] Doerner, M. F., Gardner, D. S., and Nix., W. D. Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques. Journal of Materials Research, 1(6):845–851, Nov/Dec 1986.Google Scholar
[9] Krausz, A. S. and Eyring., H. Deformation Kinetics. John Wiley and Sons, New York, 1975.Google Scholar
[10] Caillard, D. and Martin, J. L.. Aeda Metallurgica 30, 437 (1982)Google Scholar
[11] Korhonen, M. A., Bergesen, P., and Li, Che-Yu. Mechanisms of inelastic deformation and stress relaxation in thin metallization bonded to hard substrates. MRS Spring Meeting, April 29 - May 3, 1991, Anaheim, California Google Scholar
[12] Paszkiet, C. A., Korhonen, M. A., and Li, Che-Yu. MRS Fall Meeting, December 1–5, 1990, Boston, MassachusettsGoogle Scholar
[13] Dyson, B. F.. Metal Science 10, 349 (1976)Google Scholar