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The Effect of a Passivation Over-Layer on Tile Mechanisms of Stress Relaxation in Continuous Films and Narrow Lines of Aluminum

Published online by Cambridge University Press:  15 February 2011

C. A. Paszkiet ,
M. A. Korhonen  and
Che-Yu Li
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Bard Hall Cornell University, Ithaca, New York 14853
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Abstract

Stress relaxation was studied in bare and nitride-covered continuous films and narrow lines of aluminum. The rate of relaxation in unpassivated metallizations is shown to be consistent with a dislocation-controlled mechanism. Relaxation in passivated lines appears to depend on grain boundary diffusion-controlled void growth. In passivated continuous films, two rate-controlling mechanisms appear to operate in sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 161
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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