Article contents
Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching
Published online by Cambridge University Press: 01 February 2011
Abstract
In this study, we investigated surface features formed by molten KOH etching of (000-1) substrates and epilayers, using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). We found the surface features formed on (000-1) are protrusions, in contrast to well-known dimples on (0001).
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2006
References
- 2
- Cited by