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Direct Formation of GaAs-GaAlAs Quantum Dots Structure by Droplet Epitaxy
Published online by Cambridge University Press: 21 February 2011
Abstract
Numerous GaAs epitaxial microcrystals surrounded mainly by (111) and (110) facets having nearly equal size were grown on a sulfur(S)–terminated GaAs or GaALAs surface by sequentially supplying Ga and As molecular beams. The GaALAs layer growth over the GaAs microcrystals was performed by MEE process for burying GaAs microcrystals.
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- Copyright © Materials Research Society 1994
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