Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-16T17:10:29.865Z Has data issue: false hasContentIssue false
  • English
  • Français

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

Published online by Cambridge University Press:  01 February 2011

George Andrew Antonelli ,
Gengwei Jiang ,
Mandyam Sriram ,
Kaushik Chattopadhyay ,
Wei Guo  and
Herbert Sawin
George Andrew Antonelli
Affiliation:
[email protected], Novellus Systems, Inc., External Research & Development, Albany, New York, United States
Gengwei Jiang
Affiliation:
[email protected], Novellus Systems, Inc., PECVD Business Unit, Tualatin, Oregon, United States
Mandyam Sriram
Affiliation:
[email protected], Novellus Systems, Inc., PECVD Business Unit, Tualatin, Oregon, United States
Kaushik Chattopadhyay
Affiliation:
[email protected], Novellus Systems, Inc., Customer Integration Center, San Jose, California, United States
Wei Guo
Affiliation:
[email protected], Massachusetts Institute of Technology, Chemical Engineering, Cambridge, Massachusetts, United States
Herbert Sawin
Affiliation:
[email protected], Massachusetts Institute of Technology, Chemical Engineering, Cambridge, Massachusetts, United States
Get access

Abstract

Organosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

Keywords

microelectronicsplasma-enhanced CVD (PECVD) (deposition)plasma-enhanced CVD (PECVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F04-15
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Drotar, J. T. Wang, G. C. and Lu, T. M. Physical Review Letters 82, 4882–4885 (1999).Google Scholar
2 Goldfarb, D. L. Mahorowala, A. P. Gallatin, G. M. Petrillo, K. E. Rasgon, S. Sawin, H. H., Allen, D. D. Lawson, M. C. and Kwong, R. W. Journal of Vacuum Science & Technology B 22, 647–653 (2004).Google Scholar
3 Min, J. H. Hwang, S. W. Lee, G. R. and Moon, S. H. Journal of Vacuum Science & Technology A 20, 1574–1581 (2002).Google Scholar
4 Ye, J. H. and Zhou, M. S. Journal of The Electrochemical Society 147, 1168–1174 (2000).Google Scholar
5 Maex, K. Baklanov, M. R. Shamiryan, D. Brongersma, S. H. and Yanovitskaya, Z. S. Journal of Applied Physics 93, 8793–8841 (2003).Google Scholar
6 Moore, D. Carter, R. Cui, H. Burke, P. McGrath, P. Gu, S. Q. Gidley, D. and Peng, H. Journal of vacuum Science & Technology B 23, 332–335 (2005).Google Scholar
7 Goldman, M. A. Graves, D. B. Antonelli, G. A. Behera, S. P. and Kelber, J. A. Journal of Applied Physics 106 013311 1–7 (2009).Google Scholar
8 Hua, X. Stolz, C. Oehrlein, G. S. Lazzeri, P. Coghe, N. Anderle, M. Inoki, C. K. Kuan, T. S., and Jiang, P. Journal of Vacuum Science & Technology A 23, 151–164 (2004).Google Scholar
9 Chae, H. Vitale, S. A. and Sawin, H. H. Journal of Vacuum Science & Technology A 21, 381–387 (2003).Google Scholar
10 Chang, J. P. and Sawin, H. H. Journal of Vacuum Science & Technology B 19, 1319–1327 (2001).Google Scholar