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Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon

Published online by Cambridge University Press:  15 February 2011

L. Vedula ,
R. Singh ,
D. Ratakonda ,
A. Rohatgi  and
S. Narayanan
L. Vedula
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
R. Singh
Affiliation:
Clemson University, Department of Electrical Computer Engineering and Director, Materials Science and Engineering, Clemson, SC 29634, [email protected]
D. Ratakonda
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
A. Rohatgi
Affiliation:
Georgia Institute of Technology, School of Electrical Engineering, Atlanta, GA 30332
S. Narayanan
Affiliation:
Solarex, Frederick, MD 21701.
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Abstract

Quantum photoeffects associated with photons of wavelength less than 0.8 micron lead to higher bulk and surface diffusion coefficients. We have exploited this fundamental property in designing rapid isothermal processing (RIP) systems for shallow junction formation in silicon. A detailed comparative study of diffusion, metallization and CVD with and without high energy photons has been carried out. The results show that microscopic defects, cycle time and processing temperature is lower than what can be achieved byconventional methods is realized by using photons in the ultra violet (UV) and vacuum ultra violet (VUV) spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 437
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Singh, R., J. Appl. Phys., 63, R59–R114 (1988).Google Scholar
[2] Dip, A., Sol. Stat. Technol., 63 (1996).Google Scholar
[3] Singh, R., Electronics, 58, 19 (1985).Google Scholar
[4] Singh, R., Semiconductor International, 9, 28 (1986).Google Scholar
[5] Singh, R., in Handbook of Compound Semiconductors, Noyes Publications, N.J, 442 (1995).Google Scholar
[6] Singh, R. et. al., Appl. Phys. Lett., 58, 1217 (1991).Google Scholar
[7] Singh, R. et. al., Mat. Res. Soc, Symposia Proc., 429, 81 (1996).Google Scholar
[8] Suppan, P., Principles of Photochemistry, Royal Chemical Society, London, 6 (1973).Google Scholar
[9] Tu, K. N., Mayer, J. W., and Feldman, L. C., Electronic Thin Film Science for Electrical Engineers and Material Scientists, Macmillan Publishing Company, N.Y, 46 (1992).Google Scholar
[10] Andra, W. and Danan, H., Physica. stat. Solidi (a), K145 (1970).Google Scholar
[11] Mavoori, J. et. al., Appl. Phys. Lett., 65, 1935 (1994).Google Scholar
[12] Singh, R. et. al., Appl. Phys. Lett., 70, 1997.Google Scholar
[13] Ratakonda, D. et. al., J. Electrochem. Soc. (In Review).Google Scholar
[14] Singh, R., Gong, C., and Choudhry, J., Novel Techniques in Synthesis and Processing of Advanced Materials, 211 (The Minerals, Metals & Materials Society, 1995).Google Scholar
[15] Chen, Y., Singh, R., and Narayan, J., J. Elect. Mat., 26, 350 (1997).Google Scholar
[16] Singh, R. et. al., Appl. Phys. Lett., 67, 3939 (1995).Google Scholar