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Current Understanding and Modeling of Boron-Interstitial Clusters

Published online by Cambridge University Press:  01 February 2011

Peter Pichler
Peter Pichler*
Affiliation:
Fraunhofer-Institut für Integrierte Bauelemente, Bauelementetechnologie Schottkystrasse 10, 91058 Erlangen, Germany
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Abstract

Scaling of devices requires not only shallow junctions but also high levels of dopant activation. For boron as the main p-type dopant, the latter requirement is especially problematic since small clusters of boron atoms and self-interstitials, known also as boron-interstitial clusters (BICs), were found to deactivate and immobilize large fractions of the implanted atoms during post-implantation annealing. In this article, the properties of BICs are reviewed and their influence on semiconductor processes are highlighted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C3.1
Copyright
Copyright © Materials Research Society 2002

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