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Crystallization of A-Si Films on Low-Melting-Point Glass Substrates
Published online by Cambridge University Press: 28 February 2011
Abstract
Results of experiments on crystallization of thin (50 to 200 nm) amorphous Si films initially deposited onto glass substrates by different techniques (PECVD, LPCVD) and treated by different lasers (argon, excimer, or Cu-vapor) are given. The films treated are characterized by in-plane and cross-sectional TEM, and by microdiffraction. Some conclusions about mechanisms of the crystallization are made.
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- Copyright © Materials Research Society 1993
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