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Correlation Between Structural and Electronical Properties Of Strained V2O3 Thin Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Epitaxial thin films of V2O3 were grown on c-axis oriented sapphire substrates by reactive e-beam evaporation. The high orientation and epitaxy is shown by low energy electron and x-ray diffraction. The microstucture of the films was investigated by AFM imaging. The measurements show an island growth mode with a temperature dependent increase of the grain size. At a growth temperature of above 700°C a change of the surface structure is observed, which produces much more structured and irregular shaped crystallites. High temperature growth also causes changes in the electronical properties, due to an increased stress in the films as measured by XRD. The metal-insulator transition (MIT) and the properties of the metallic phase of the films were determined mainly by temperature dependent electrical resistivity measurements. The metallic properties are distorted in films grown at low temperature (T<500°C) probably due to defects, dislocations and grain boundaries. Favorable growth conditions for films showing a single crystal like MIT were found in a narrow temperature range around 550°C. For higher growth temperatures (T>650°C) metallic behavior at high temperatures is suppressed by an in plane tensile stress. The electronic properties of such films are similar to those of chromium doped V2O3. The relation between growth conditions, structural properties and resulting electronic properties is discussed.
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- Copyright © Materials Research Society 1997