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Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications

Published online by Cambridge University Press:  01 February 2011

Kris Campbell ,
Morgan G. Davis  and
Jeffrey M. Peloquin
Kris Campbell
Affiliation:
[email protected], Boise State University, Electrical and Computer Engineering, 1910 University Dr., Boise, ID, 83725-2075, United States, 208-426-5968
Morgan G. Davis
Affiliation:
[email protected], Boise State University, Materials Science and Engineering, 1910 University Dr., Boise, ID, 83725, United States
Jeffrey M. Peloquin
Affiliation:
[email protected], Boise State University, Chemistry, 1910 University Dr., Boise, ID, 83725, United States
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Abstract

Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, C.M., Microelectronics Journal 38, 52–59 (2007)). Here, we report the synthesis of (Ge40Se60)100−zMz alloys where M = Sn, In, Sb, and Zn, and the corresponding bulk material Raman spectra and differential scanning calorimetry data in order to explore material compositions that might be useful for producing a multi-state phase-change memory device.

Keywords

memoryelectronic materialchemical composition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I12-10
Copyright
Copyright © Materials Research Society 2007

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References

1. Hudgens, S., Johnson, B., MRS Bulletin 29, 829–833 (2004).Google Scholar
2. Campbell, K. A. and Anderson, C. M., Microelectronics Journal 38, 52–59 (2007).Google Scholar
3. Feltz, A., Amorphous Inorganic Materials and Glasses, (VCH, New York, 1993) p. 230.Google Scholar