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Analysis of Plasma Oxidised Hg1-xCdxTe Surfaces

Published online by Cambridge University Press:  25 February 2011

P.W. Leech ,
R.L. Moore ,
E.E. Crisman ,
C.B. Roberts  and
P.J. Stiles
P.W. Leech
Affiliation:
AOTC Telecom Research Laboratories, Melbourne, Victoria, Australia
R.L. Moore
Affiliation:
Evans East, Plainsboro, NJ 08536, USA
E.E. Crisman
Affiliation:
Department of Physics, Brown University, Providence, RI 02912, USA
C.B. Roberts
Affiliation:
Department of Physics, Brown University, Providence, RI 02912, USA
P.J. Stiles
Affiliation:
Department of Physics, Brown University, Providence, RI 02912, USA
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Abstract

We report for the first time on the application of Field Enhanced Plasma Oxidation (FEPO) to the passivation of Hg1-xCdxTe. Oxide layers of thickness 250-500Å were grown on Hg0.4Cd0.6Te at temperatures in the range from 30°C to 100°C. The index of refraction of the oxide layer, as determined by ellipsometry, was between 1.99 and 2.10. Auger depth profiles of the surfaces showed a compositional variation through the oxide with predominantly a mix of Cd and Te oxides in a film depleted in Hg. The oxides had dielectric constants of 3.6 to 4.5, and dielectric strength greater than 1 × 107 V/cm. The oxide/semiconductor interfaces had high densities of “slow” states but were capable of being depleted and accumulated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 269
Copyright
Copyright © Materials Research Society 1992

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References

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