Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T04:29:28.511Z Has data issue: false hasContentIssue false
  • English
  • Français

Ab-initio Calculations to Model Anomalous Fluorine Behavior

Published online by Cambridge University Press:  01 February 2011

Milan Diebel  and
Scott T. Dunham
Milan Diebel
Affiliation:
Department of Physics, University of Washington, Seattle, WA 98195-1560, USA
Scott T. Dunham
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195-2500, USA
Get access

Abstract

Implanted fluorine has been observed to behave unusually in silicon, manifesting apparent uphill diflusion [1]. We are further motivated to understand the behavior of implanted fluorine in silicon by experiments which suggest that fluorine reduces boron diflusion [2, 3, 4, 5] and enhances boron activation in shallow junctions [2, 3]. In order to investigate fluorine behavior, we calculated the energy of fluorine defect structures in the framework of density functional theory (DFT). Besides identifying the ground-state con.guration of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found. The latter strongly suggests a distinct fluorine diflusion mechanism, which was implemented in a continuum diflusion simulation and compared to experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C4.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Jeng, S.P., Ma, T.P., Canteri, R., Anderle, M., and Rublo, G.W.., Appl. Phys. Lett. 61, 1310 (1992).Google Scholar
[2] Huang, T.H. and Kwong, D.L., Appl. Phys. Lett. 65, 1829 (1994).Google Scholar
[3] Park, J. and Hwang, H. in Si Front-End Processing: Physics and Technology of Dopant-Defect Interactions, edited by Gossmann, H.J. L., Haynes, T.E., Law, M.E., Larsen, A.N., and Odanaka, S., (Mater. Res. Soc. Symp. Proc. 568, Warrendale, PA, 1999) pp. 71–75.Google Scholar
[4] Downey, D.F., Chow, J.W., Ishida, E., and Jones, K.S., Appl. Phys. Lett. 73, 1263 (1998).Google Scholar
[5] Robertson, L.S., Warnes, P.N., Jones, K.S., Earles, S.K., Law, M.E., Downey, D.F., Falk, S., and Liu, J. in Si Front-End Processing: Physics and Technology of Dopant-Defect Interactions II, edited by Agarwal, A., Pelaz, L., Vuong, H.H., Packan, P., Kase, M., (Mater. Res. Soc. Symp. Proc. 610, Warrendale, PA, 2000) pp. B4.2–B4.2.6.Google Scholar
[6] Fastenko, P., Dunham, S.T., and Chakravarthi, S. presented at the 2002 MRS Spring Meeting, San Francisco, CA, 2002 (published in this proceeding).Google Scholar
[7] Estreicher, S. K., Gharaibeh, M., Fedders, P.A., and Ordej'on, P., Phys. Rev. Lett. 86, 1247 (2001).Google Scholar
[8] Van de Walle, C.G., McFeely, F.R., and Pantelides, S.T., Phys. Rev. Lett. 61, 1867 (1988)Google Scholar
[9] Taguchi, A. and Hirayama, Y., Solid State Commun. 116, 595 (2000).Google Scholar
[10] Kresse, G. and Hafner, J., Phys. Rev. B 47, RC558 (1993); G. Kresse and J. Furthmüller, 54, 11169 (1996).Google Scholar
[11] Vanderbilt, D., Phys. Rev. B 41 7892 (1990); G. Kresse and J. Hafner, J. Phys. Condens. Matter 6, 8245 (1994).Google Scholar