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First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film

Published online by Cambridge University Press:  15 May 2018

Coline Adda ,
Laurent Cario ,
Julien Tranchant ,
Etienne Janod ,
Marie-Paule Besland ,
Marcelo Rozenberg ,
Pablo Stoliar  and
Benoit Corraze
Coline Adda*
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France CIC nanoGUNE, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian, Spain
Laurent Cario*
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
Julien Tranchant
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
Etienne Janod
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
Marie-Paule Besland
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
Marcelo Rozenberg
Affiliation:
LPS, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France
Pablo Stoliar
Affiliation:
CIC nanoGUNE, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian, Spain
Benoit Corraze
Affiliation:
Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
*
Address all correspondence to Laurent Cario at [email protected], [email protected]
Address all correspondence to Laurent Cario at [email protected], [email protected]
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Abstract

A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)2O3 were deposited by magnetron sputtering and patterned with micron-scale TiN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)2O3 thin films.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 835 - 841
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Copyright
Copyright © Materials Research Society 2018 

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