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Solution-Processed and Self-Assembled Monolayer-Treated High-Voltage Organic Thin Film Transistors for Flexible MEMS Integration

Published online by Cambridge University Press:  15 January 2018

Andy Shih*
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA02139, U.S.A.
Akintunde Ibitayo Akinwande
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA02139, U.S.A.
*
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Abstract

We report a 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) solution-processed high-voltage organic thin film transistor (HVOTFT) with a large breakdown voltage of |VDS| > 450 V, a three-fold increase from previous results. An offset channel architecture and an organosilane-based self-assembled monolayer (SAM) treatment were used to achieve large breakdown voltages. Solution-processed HVOTFTs will enable novel high-voltage and flexible applications. Reliability of the HVOTFT under high-field stress was studied in the context of threshold and onset to conduction voltages.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

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References

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