Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T08:58:55.741Z Has data issue: false hasContentIssue false

Automated TEM Sample Preparation

Published online by Cambridge University Press:  14 March 2018

Wayne D. Kaplan
Affiliation:
Technion-lsrael Institute of Technology
Efrat Raz
Affiliation:
SELA USA, Inc.
Colin Smith
Affiliation:
SELA USA, Inc.

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2000

References

1. Williams, D. B. and Carter, C. B., Transmission Electron Microscopy, Plenum Press, N.Y. (1996).CrossRefGoogle Scholar
2. Strecker, A., Salzberger, U., and Mayer, J., “Specimen Preparation for Transmission Electron Microscopy; Reliable Method for Cross-Sections and Brittle Materials,” Praktische- Metallographle, 30[10]:482-495 (1993).Google Scholar
3. Brandon, D. and Kaplan, W.D., Mi era structural Characterization of Materials, John Wiley & Sons, N.Y, (1999).Google Scholar
4. Walker, J.F, Moore, D.F., and Whitney, J.T., “Focused Ion Beam Processing for Microscale Fabrication,” Microelectronic- Engineering, 30[1-4] :517-522 (1996).Google Scholar
5. Kitano, Y., Fujikawa, Y., Kamino, T., Yaguchi, T., and Saka, H., “TEM Observation of Micrometer-Sized Ni Powder Particles Thinned by FIB Cutting Technique,” J. Electron Microscopy, 44 [5]:410-413(1995).Google Scholar
6. Kitano, Y., Fujikawa, Y., Takeshita, H., Kamino, T., Yaguchi, T., Matsumoto, H., and Koike, H., “TEM Observation of Mechanically Alloyed Powder Particles (MAP of Mg-Zn Alloy Thinned by the FIB Cutting Technique,” J. Electron Microscopy, 44[5]:376-383(1995).Google Scholar
7. Overwijk, M.H.F., Heuvel, F.C. Van Den, and Buile-Lieuwma, C.W.T., “Novel Scheme for the Preparation of Transmission Electron Microscopy Specimens with a Focused Ion Beam,” J. Vacuum Science & Tech., 11[6]:2021-2024 (1993).Google Scholar