Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T10:42:30.999Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Microscopy Study of Planar Defects in Polycrystalline CdTe Thin Films

Published online by Cambridge University Press:  02 July 2020

Y. Yan ,
K.M. Jones  and
M.M. Al-Jassim
Y. Yan
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado80401.
K.M. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado80401.
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado80401.
Get access

Abstract

CdTe is a promising photovoltaic material due to its near optimum band gap and high absorption coefficient. Polycrystalline, thin-film CdTe/CdS solar cells have demonstrated an efficiency of 15.8%. High density of extended defects is often found in polycrystalline CdTe films grown by close-spaced sublimation (CSS). So far, most investigations of defects in CdTe have focused on epitaxially grown films, and the reported extended defects are mainly lamellar twins. However, epitaxially grown films generally have a different microstructure compared to CSS grown polycrystalline CdTe thin films. in this paper, we report our study of extended defects in CSSgrown polycrystalline CdTe thin films by high-resolution transmission electron microscopy (HRTEM). We found that the extended defects are mostly lamellar twins and stacking faults. The stacking faults always propagate across the grains, without ending at a partial dislocation inside the grains.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 556 - 557
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Britt, J., Ferekides, C., Appl. Phys. Lett. 62 (1993) 2851.CrossRefGoogle Scholar
2.Al-Jassim, M.M., Dhere, R.G., Jones, K.M., Hasoon, F.S., Sheldon, P., in: Schmid, J., Ossenbrink, H.A., Helm, P., Ehmann, H. and Dunlop, E.D. (Eds.), Proceedings of 2ndWorld Conference on Photovoltaic Solar Energy Conversion, Viena, Austria, July 6-10, 1998, p.1063.Google Scholar
3.Smith, D.J., Tsen, S.-C.Y., Chen, Y.P., Faurie, J.-P., Sivananthan, S., Appl. Phys. Lett. 67 (1995) 1591.CrossRefGoogle Scholar
4.Xin, Y., Browning, N.D., Rujirawat, R., Sivananthan, S., Chen, Y.P., Nellist, P.D., Pennycook, S.J., J. Appl. Phys. 84 (1998) 4292.CrossRefGoogle Scholar