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Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe

Published online by Cambridge University Press:  01 August 2010

C Vartuli
Affiliation:
Texas Instruments
G Lian
Affiliation:
Texas Instruments
YS Choi
Affiliation:
Texas Instruments
J Chung
Affiliation:
Texas Instruments

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Type
Abstract
Copyright
Copyright © Microscopy Society of America 2010