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A Robust Basis for Grain Identification in Polycrystalline Thin Film Devices Using Cepstrum Transforms of 4D-STEM Diffraction Pattern

Published online by Cambridge University Press:  30 July 2020

Xiyue Zhang ,
Elliot Padgett ,
Lijun Zhu ,
Robert Buhrman  and
David Muller
Xiyue Zhang
Affiliation:
Cornell University, Ithaca, New York, United States
Elliot Padgett
Affiliation:
Cornell University, DC, Washington, United States
Lijun Zhu
Affiliation:
Cornell University, Ithaca, New York, United States
Robert Buhrman
Affiliation:
Cornell University, Ithaca, New York, United States
David Muller
Affiliation:
Cornell University, Ithaca, New York, United States

Abstract

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Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 1620 - 1622
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Copyright
Copyright © Microscopy Society of America 2020

References

Padgett, E. et al. , The Exit-Wave Power-Cepstrum Transform for Scanning Nanobeam Electron Diffraction. Part 1: Robust Strain Mapping at Subnanometer Resolution and Subpicometer Precision, arXiv:1911.00984 (2019).10.1016/j.ultramic.2020.112994CrossRefGoogle Scholar
Kim, K.-H. et al. , TEM based high resolution and low-dose scanning electron nanodiffraction technique for nanostructure imaging and analysis, Micron 71(2015), 39–45.10.1016/j.micron.2015.01.002CrossRefGoogle ScholarPubMed
Cueva, P. et al. , Data Processing for Atomic Resolution Electron Energy Loss Spectroscopy, Microscopy and Microanalysis 18 (2012), 667–675.10.1017/S1431927612000244CrossRefGoogle ScholarPubMed
Research supported by CCMR DMR-1719875, DOE grants DE-EE0007271, and DE-SC0019445.Google Scholar