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Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

Published online by Cambridge University Press:  30 July 2020

Prudhvi Ram Peri ,
Kevin Hatch ,
Daniel Messina ,
Kai Fu ,
Yuji Zhao ,
Robert Nemanich  and
David Smith
Prudhvi Ram Peri
Affiliation:
Arizona State University, Tempe, Arizona, United States
Kevin Hatch
Affiliation:
Arizona State University, Tempe, Arizona, United States
Daniel Messina
Affiliation:
Arizona State University, Tempe, Arizona, United States
Kai Fu
Affiliation:
Arizona State University, Tempe, Arizona, United States
Yuji Zhao
Affiliation:
Arizona State University, Tempe, Arizona, United States
Robert Nemanich
Affiliation:
Arizona State University, Tempe, Arizona, United States
David Smith
Affiliation:
Arizona State University, Tempe, Arizona, United States

Abstract

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Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 840 - 842
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Copyright
Copyright © Microscopy Society of America 2020

References

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This work was supported by ARPA-E award DE-AR0000868. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.Google Scholar