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The Outward Diffusion of Sb during Nanowire Growth Studied by Quantitative High-Angle Annular Dark Field Scanning Transmission Electron Microscopy

Published online by Cambridge University Press:  27 August 2014

H. Kauko
Affiliation:
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway
T. Grieb
Affiliation:
Institut für Festkörperphysik, Universität Bremen, Bremen, Germany
A. M. Munshi
Affiliation:
Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim, Norway
K. Müller
Affiliation:
Institut für Festkörperphysik, Universität Bremen, Bremen, Germany
A. Rosenauer
Affiliation:
Institut für Festkörperphysik, Universität Bremen, Bremen, Germany
B. O. Fimland
Affiliation:
Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim, Norway
A. T. J. van Helvoort
Affiliation:
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Kauko, H, et al, Micron, 44 (2013), p. 254.Google Scholar
[2] Todorovic, J, et al, Semiconductor Science and Technology, 28 (2013), 115004.Google Scholar
[3] Rosenauer, A, Schowalter, M Springer Proceedings in Physics, 120 (2008), p. 170.Google Scholar
[4] The authors acknowledge funding from Faculty of Natural Sciences and Technology at NTNU, and the “RENERGI” program of the Research Council of Norway under grant no. 190871 and the Deutsche Forschungsgemeinschaft under grant no. RO 2057/8-1.Google Scholar