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A Novel Strategy to Effectively Characterize FinFET Device by Multidirectional Comprehensive Analytical TEM in Semiconductor Wafer-foundries

Published online by Cambridge University Press:  04 August 2017

Wayne Zhao ,
Bianzhu Fu ,
Yong Wei  and
Irene Brooks
Wayne Zhao
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8, GLOBALFOUNDRIES, Malta, New York, USA.
Bianzhu Fu
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8, GLOBALFOUNDRIES, Malta, New York, USA.
Yong Wei
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8, GLOBALFOUNDRIES, Malta, New York, USA.
Irene Brooks
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8, GLOBALFOUNDRIES, Malta, New York, USA.

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 336 - 337
Copyright
© Microscopy Society of America 2017 

References

[1] Zhao, W., etal, Microscopy & Microanalysis Vol. 20(Supplement 3 2014). pp. 362–363.Google Scholar
[2] Zhao, W., et al. Proc. 38 t International Symposium for Testing and Failure Analysis, (2012), pp. 347~355.Google Scholar
[3] Zhao, W. Symp. Proc. the Material Research Society, 2002 Fall Meeting 2002 Vol. 738, pp. G7.15.1–6.Google Scholar
[4] Authors would like to express sincere thanks to Nicolas LaManque, Lowell Hodgkins, and Randy Newkirk, for their excellence in TEM-preparation, Yue Zhang for screening the TEM samples, and GLOBALFOUNDRIES Fab8 electrical failure analysis team for the fault-isolation. Thanks also go to Fab8 Characterization Management and Legal team for supports in the publication clearance, and to Ed Crawford for the proof-reading.Google Scholar