No CrossRef data available.
Article contents
Nanofabrication Limits in Layered Ferroelectric Semiconductors via He-ion Beam
Published online by Cambridge University Press: 04 August 2017
Abstract
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
- Type
- Abstract
- Information
- Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 262 - 263
- Copyright
- © Microscopy Society of America 2017
References
[1]
Chhowalla, M., et al.
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature chemistry
5, 263–275, 2013.Google Scholar
[2]
David, C Joy
, . Helium Ion Microscopy: Principles and Applications, First ed
Springer
New York USAHeidelberg Germany, Dordrecht Netherlands, London United Kingdom 2013.Google Scholar
[3]
Belianinov, A., et al.
Polarization control via He-ion beam induced nanofabrication in layered ferroelectric semiconductors. ACS applied materials & interfaces
8, 7349–7355, 2016.Google Scholar
[4] Research was supported (M.B., H.H., V. I., A.V.I., M.C., P.M.,O. S. O) and partially conducted (AFM, HIM, ToF-SIMS) at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy. Research was partially sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U. S. Department of Energy (HIM, A. B., crystal growth, M.A.S. and M.A.M.)..Google Scholar
[5] F Author in “Introduction to abstract writing”, ed. D Writers, (Publisher, City) p.1..Google Scholar
You have
Access