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HAADF STEM and PL Characterization of Monolayer-Thick GaN/(Al,Ga)N Quantum Wells for Deep UV Optoelectronics Applications

Published online by Cambridge University Press:  04 August 2017

A.A. Toropov ,
E.A. Evropeytsev ,
V.N. Jmerik ,
D.V. Nechaev ,
S.V. Ivanov  and
S. Rouvimov
A.A. Toropov
Affiliation:
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, Russia
E.A. Evropeytsev
Affiliation:
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, Russia
V.N. Jmerik
Affiliation:
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, Russia
D.V. Nechaev
Affiliation:
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, Russia
S.V. Ivanov
Affiliation:
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, Russia
S. Rouvimov
Affiliation:
University of Notre Dame, Notre Dame, Indiana, USA

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1488 - 1489
Copyright
© Microscopy Society of America 2017 

References

[1] Islam, S.M., et al, Appl. Phys. Lett 110 2017 041108.CrossRefGoogle Scholar
[2] Rong, X., et al, Adv. Mater 28 2016). p. 7978.CrossRefGoogle Scholar
[3] Ivanov, S. V., et al, Semicond.Sci.Technol 29 2014 084008.CrossRefGoogle Scholar
[4] The authors would like to acknowledge the supported by the Government of the Russian Federation (Project # 14.W03.31.0011) and use of NDIIF electron microscopy facilities at University of Notre Dame..Google Scholar