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Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter

Published online by Cambridge University Press:  04 August 2017

Jamie Roberts ,
David Osborn  and
P. Fraundorf'
Jamie Roberts
Affiliation:
Physics & Astronomy Department, University of Missouri - St. Louis, MO, USA
David Osborn
Affiliation:
Center for Nanoscience, University of Missouri - St. Louis, MO, USA
P. Fraundorf'
Affiliation:
Physics & Astronomy Department, University of Missouri - St. Louis, MO, USA Center for Nanoscience, University of Missouri - St. Louis, MO, USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1498 - 1499
Copyright
© Microscopy Society of America 2017 

References

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[8] Thanks to Jai Kasthuri at SunEdison plus Garaub Samanta and colleagues at SunEdison Semiconductor for interesting silicon specimens and technology insights, plus the NASA-Mo spacegrant program and UMSL Physics and Astronomy for funds.Google Scholar