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EELS Evidence for Nascent Polymerization of Carbon and Silicon in Amorphization of SiC

Published online by Cambridge University Press:  30 July 2020

Linn Hobbs ,
Alexander Leide  and
Ju Li
Linn Hobbs
Affiliation:
Massachusetts Institute of Technology, Belmont, Massachusetts, United States
Alexander Leide
Affiliation:
Universisty of Oxford, Oxford, England, United Kingdom
Ju Li
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

Abstract

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Type
Advanced Characterization of Nuclear Fuels and Materials
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 648 - 651
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Copyright
Copyright © Microscopy Society of America 2020

References

Zhe, C. F., Silicon Carbide Materials, Processing and Devices (CRC Press, Boca Raton, FL, 2003).10.4324/9780203496497CrossRefGoogle Scholar
Muto, S., Tanabe, T., Local structures and damage processes of electron-irradiated SiC studied with transmission electron microscopy and electron energy-loss spectroscopy, J. Appl. Phys. 93 (2003) 3765-3775.10.1063/1.1555673CrossRefGoogle Scholar
Katoh, Y., Snead, L. L., Szlufarska, I. , Weber, W. J., Radiation effects in SiC for nuclear structural applications, Current Opin. Solid State Mater. Sci. 16 (2012) 143-152.10.1016/j.cossms.2012.03.005CrossRefGoogle Scholar
Hobbs, L. W., The role of topology and geometry in the radiation-induced amorphization of network structures, J. Non-Cryst. Solids 182 (1995) 27-39.10.1016/0022-3093(94)00574-5CrossRefGoogle Scholar
Hobbs, L. W., Topological approaches to the structure of crystalline and amorphous atom assemblies, in Engineering of Crystalline Materials Properties, ed. Novoa, J. J., Braga, D., Addadi, L. (Springer, 2008) pp. 193-230.10.1007/978-1-4020-6823-2_10CrossRefGoogle Scholar
Hobbs, L. W., Jesurum, C. E., Berger, B., Rigidity constraints in the amorphization of single- and multiply-polytopic structures, in Rigidity Theory and Applications, ed. Duxbury, P. M., Thorpe, M. F. (Plenum, New York, 1999) pp. 191-216.Google Scholar
Yuan, X., Hobbs, L. W., Modeling chemical and topological disorder in irradiation-amorphized silicon carbide, Nucl. Instrum. Methods Phys. Res. B 192 (2002) 74-82.10.1016/S0168-583X(02)00516-5CrossRefGoogle Scholar
Leide, A. J., Hobbs, L. W., Wang, Z., Chen, D., Shao, L., Li, J., The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide. deduced from electron spectroscopy and ab intio simulations, J. Nucl. Mater. 514 (2019) 299-310.10.1016/j.jnucmat.2018.11.036CrossRefGoogle Scholar
Finocchi, F., Galli, G., Parrinello, M., Bertoni, C. M., Structural properties of amorphized SiC via ab initio molecular dynamics, J. Non-Cryst. Solids 137-138 Part I (1999) 153-156; also, Phys. Rev. Lett. 68 (1992) 3044-3047.Google Scholar