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Direct Observation of Oxygen Movement in Graphene Oxide-Based Resistive Switching Memory

Published online by Cambridge University Press:  04 August 2017

Sungkyu Kim ,
Jong Chan Kim  and
Hu Young Jeong
Sungkyu Kim
Affiliation:
Department of Materials Science and Engineering and NUANCE Center, Northwestern University, Evanston, Illinois, United States
Jong Chan Kim
Affiliation:
School of Materials Science and Engineering, UNIST, Ulsan, South Korea
Hu Young Jeong
Affiliation:
UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering, UNIST, Ulsan, South Korea

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1500 - 1501
Copyright
© Microscopy Society of America 2017 

References

[1] Samuele, Prro, et al, Carbon 85 2015). p. 383.Google Scholar
[2] Sung Kyu, Kim, et al, Advanced Functional Materials 25 2015). p. 6710.Google Scholar
[3] Sung Kyu, Kim, et al, Advanced Functional Materials 26 2016). p. 7406.Google Scholar
[4] Joshua Yang, J, et al, Nanotechnology 20 2009). p. 215201.CrossRefGoogle Scholar
[5] This work is supported by NRF-2014R1A1A2058713.Google Scholar