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Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO2

Published online by Cambridge University Press:  05 August 2019

R. Demoulin ,
M. Roussel ,
S. Duguay ,
D. Muller ,
D. Mathiot ,
P. Pareige  and
E. Talbot
R. Demoulin
Affiliation:
Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France
M. Roussel
Affiliation:
Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France
S. Duguay
Affiliation:
Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France
D. Muller
Affiliation:
ICube Laboratory, Université de Strasbourg and CNRS, B.P. 20, 67037 Strasbourg Cedex, France.
D. Mathiot
Affiliation:
ICube Laboratory, Université de Strasbourg and CNRS, B.P. 20, 67037 Strasbourg Cedex, France.
P. Pareige
Affiliation:
Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France
E. Talbot*
Affiliation:
Normandie Univ, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen, France
*
*Corresponding author: [email protected]

Abstract

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Type
New Frontiers in Atom Probe Tomography Applications
Information
Microscopy and Microanalysis , Volume 25 , Supplement S2 , August 2019 , pp. 2540 - 2541
Copyright
Copyright © Microscopy Society of America 2019 

References

[1]M, J.. Luther et al. , Nature Materials 10 (2011), p. 361-366.Google Scholar
[2]Dalpian, G. M., Chelikowsky, J.R., Physical Review Letter 96 (2006), p. 226802.Google Scholar
[3]Fujii, M. et al. , Journal of Applied Physics 93 (2003), p. 1990-1995.Google Scholar