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An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries

Published online by Cambridge University Press:  04 August 2017

Wayne Zhao ,
Yun-yu Wang  and
Bianzhu Fu
Wayne Zhao
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8 at Malta
Yun-yu Wang
Affiliation:
Fab10 at Fishkill, GLOBALFOUNDRIES, New York, USA.
Bianzhu Fu
Affiliation:
Physical Failure Analysis, Center for Complex Analysis, Characterization Group, Fab8 at Malta

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1490 - 1491
Copyright
© Microscopy Society of America 2017 

References

[1] Zhao, W., etal, Microscopy & Microanalysis Vol. 20(Supplement 3 2014). pp. 362–363.Google Scholar
[2] Zhao, W., , et al., Proc. 38 t International Symposium for Testing and Failure Analysis, (2012), pp. 347~355.Google Scholar
[3] Zhao, W. Symp. Proc. the Material Research Society, 2002 Fall Meeting 2002 Vol. 738, pp. G7.15.1–6.Google Scholar
[4] Kuhn, K. J., et al, ECS Transactions Vol. 33(6 2010). pp. 3–17.Google Scholar
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[6] Wang, Y. Y., et al, Ultramicroscopy 124 2013). pp. 117–129.Google Scholar
[7] Wang, Y.Y., et al., US patent: US 7,015,469 B2 (2006).Google Scholar
[8] Thanks to Fab8 Management and Legal teams for supporting the publication clearance.Google Scholar