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Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

Published online by Cambridge University Press:  30 July 2020

Ping Lu ,
Evan Anderson ,
Scott Schmucker ,
Fabian Pena ,
Esther Frederick ,
Jeffrey Ivie ,
Ezra Bussmann ,
Deanna Lopez ,
Lisa Tracy  and
Tzu-Ming Lu
...Show all authors
Ping Lu
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Evan Anderson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Scott Schmucker
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Fabian Pena
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Esther Frederick
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Jeffrey Ivie
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Ezra Bussmann
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Deanna Lopez
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Lisa Tracy
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Tzu-Ming Lu
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
George Wang
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Daniel Ward
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States
Shashank Misra
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, United States

Abstract

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Type
Pushing the Limits of Detection in Quantitative (S)TEM Imaging, EELS, and EDX
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 1516 - 1517
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Copyright
Copyright © Microscopy Society of America 2020

References

Ward, D.R. et al. , Appl. Phys. Lett. 111, 193101 (2017).10.1063/1.4998639CrossRefGoogle Scholar
Ward, D.R. et al. , Electronic Device Failure Analysis Mag. 22 4–10 (2020).Google Scholar
Phillips, P.J. et al. , Ultramicroscopy 116, 47–55 (2012).10.1016/j.ultramic.2012.03.013CrossRefGoogle Scholar
Lu, P., Romero, E., Lee, S., MacManus-Driscoll, J. L. & Jia, Q. X., Microsc. Microanal. 20, 1782–1792 (2014).10.1017/S1431927614013245CrossRefGoogle Scholar
Lu, P., Zhou, L., Kramer, M.J. & Smith, D. J., Sci. Rep. 4, 3945–3949 (2014).10.1038/srep03945CrossRefGoogle Scholar
Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility.Google Scholar