Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T18:04:52.464Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and degradation mechanisms of TaSiN diffusion barriers for Cu interconnects

Published online by Cambridge University Press:  05 September 2003

Hans-Jürgen Engelmann ,
René Hübner ,
Michael Hecker ,
Norbert Mattern ,
Christian Wenzel ,
Ehrenfried Zschech  and
Klaus Wetzig
Hans-Jürgen Engelmann
Affiliation:
AMD Saxony LLC & Co KG, D-01330 Dresden, Germany
René Hübner
Affiliation:
Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
Michael Hecker
Affiliation:
Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
Norbert Mattern
Affiliation:
Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
Christian Wenzel
Affiliation:
Dresden University of Technology, 01062 Dresden, Germany
Ehrenfried Zschech
Affiliation:
AMD Saxony LLC & Co KG, D-01330 Dresden, Germany
Klaus Wetzig
Affiliation:
Leibniz Institute for Solid State and Materials Research, 01069 Dresden, Germany
Get access

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Invited Papers
Information
Microscopy and Microanalysis , Volume 9 , Issue S03 , September 2003 , pp. 248 - 249
Copyright
Copyright © Microscopy Society of America 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)