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The Effect of an Electric Field on the Reaction Between Oxides

Published online by Cambridge University Press:  02 July 2020

Matthew T. Johnson  and
C. Barry Carter
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN, 55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN, 55455
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It is well known that diffusion in ionic materials occurs primarily by the movement of charged species. Therefore, an applied electric field can provide a very large driving force for mass transport. In the present study, thin films of In2O3 and Fe2O3 have been deposited on (001) and (111) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples have then been reacted in an applied electric field at elevated temperatures. The electric field directly influences the diffusion of the cations in the constitutive layers. Through the use of both transmission (TEM) and scanning (SEM) electron microscopy, diffusion couples reacted either with and without an electric field have been analyzed to examine the effect that an induced ionic current can have on solid-state reaction processes.

The apparatus for reacting the diffusion couples in a field has been described elsewhere. The diffusion couples were characterized in cross-section by SEM and TEM techniques.

Type
Microscopy of Ceramics and Minerals
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 594 - 595
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Schmalzried, H., Chemical Kinetics of Solids, WeinheimVerlag Segsellschaft(1995)CrossRefGoogle Scholar
2.Johnson, M. T., Schmalzried, H. and Carter, C. B.Solid State Ionics [101–103](1997)1327Google Scholar
3.Narayan, J., Weeks, R. A. and Sonder, E., J. Appl. Phys 49[12]( 1978)5977CrossRefGoogle Scholar
4. The authors acknowledge the research support of the 3M Harry Heltzer Chair and the Center for Interfacial Engineering, a National Science Foundation Engineering Research CenterGoogle Scholar