Metal-ferroelectric-insulator-Si (MFIS) structures using HfSiON as buffer layers were fabricated, and the impact of buffer layer thickness on the electrical properties of the MFIS devices was investigated. HfSiON films with thickness ranging from 1 to 4 nm were deposited by electron beam evaporation, which exhibited much reduced leakage current when compared to that of SiO2 with the same equivalent oxide thickness. From the viewpoint of polarization and charge injection, the flatband voltage and memory window width dependent on the sweeping voltages were discussed for the MFIS diodes with 1-, 2-, and 4-nm-thick HfSiON buffer layers. Small leakage current as well as excellent long-term data retention characteristics were found for all of these samples. It was also found that MFIS diodes with 2-nm-thick HfSiON buffer layer have the largest memory window width. Ferroelectric-gate transistors fabricated with a Pt/SBT(300nm)/HfSiON (2 nm)/Si gate structure showed a memory window of 0.8 V and a high drain current on/off ratio of 108 for the gate voltage sweep between +4 and −4 V. All of these excellent electrical properties proved that HfSiON acts as an excellent barrier for suppressing both leakage current and atomic interdiffusion.

Rapidly solidified nanocrystalline RE–TM–B (RE = Nd, Pr, Dy, TM = Fe, Co) alloys with enhanced hard magnetic properties were synthesized by melt spinning. The composition- and microstructure-dependent elevated temperature magnetic properties were investigated. The temperature coefficients of remanence (α) and coercivity (β) were determined. The effects of Pr substituting Nd, Co substituting Fe, Dy substituting RE, and grain size on the Curie temperature and thermal stability were studied. Co or Dy substitutions were found to have a significant beneficial effect on the thermal stability. Reducing grain size could also improve elevated temperature behavior. Maximum energy product (BH)max > 100 kJ/m3 could be obtained in compositionally optimized nanophase alloys at temperature of 473 K. Extremely low coefficients of α and β were realized in exchange coupled nanocomposite alloys. Bonded nanocomposite magnets with α = −0.052%/K and β = −0.0365%/K for 300–400 K were also successfully fabricated.

Ni–7 wt% V diffusion barrier is commonly used in flip chip technology, and Sn is the primary element of all commercial electronic solders. Different from the interfacial reactions in the Sn/Ni couples, a ternary T phase is formed in the Sn/Ni–7 wt% V couples reacted at temperatures lower than 350 °C. The T phase is a mixture of an amorphous phase and the Ni3Sn4 phase with grains about 50 nm in size. The amorphous phase is composed mainly of Sn and V atoms, and it is formed due to the fast diffusion of Sn and relative immobility of V. Activation energy of the T phase formation is 16.5 kJ/mol, which is approximately 50% of that of the Ni3Sn4 phase determined from the Sn/Ni interfacial reactions. The T phase is no longer formed and the reaction product is the Ni3Sn4 phase in the Sn/Ni–7 wt% V couples reacted at temperatures higher than 350 °C.

Frictional behavior and interfacial adhesion of differently textured pyrolytic carbon layers on Si substrate were investigated by indentation and scratch testing. A large amount of elastic recovery and a low coefficient of friction (μ = 0.05 to 0.09) were observed. Elastic/plastic and frictional behaviors of the coatings are strongly influenced by the microstructure of the pyrolytic carbon films, especially by the texture. The critical load at which the first abrupt increase in the normal displacement occurs was used to characterize interfacial adhesive strength. A pyrolytic carbon film deposited at higher residence time from a gas mixture containing 3% oxygen exhibited higher critical loads than film deposited at lower residence time without oxygen. The results can be understood if one assumes that the gas phase composition during deposition significantly influences the bonding strength at the interface. Failure mechanisms are discussed for both types of films.

We present an off-lattice, on-the-fly kinetic Monte Carlo (KMC) model for simulating stress-assisted diffusion and trapping of hydrogen by crystalline defects in iron. Given an embedded atom (EAM) potential as input, energy barriers for diffusion are ascertained on the fly from the local environments of H atoms. To reduce computational cost, on-the-fly calculations are supplemented with precomputed strain-dependent energy barriers in defect-free parts of the crystal. These precomputed barriers, obtained with high-accuracy density functional theory calculations, are used to ascertain the veracity of the EAM barriers and correct them when necessary. Examples of bulk diffusion in crystals containing a screw dipole and vacancies are presented. Effective diffusivities obtained from KMC simulations are found to be in good agreement with theory. Our model provides an avenue for simulating the interaction of hydrogen with cracks, dislocations, grain boundaries, and other lattice defects, over extended time scales, albeit at atomistic length scales.

Chemical vapor deposition of diamond has opened up new applications in microelectronics, microelectromechanical systems (MEMS), and coating technologies. This paper compares and contrasts the high-temperature electrical behavior of microcrystalline versus nanocrystalline diamond films. Through-thickness current–voltage characteristics between room temperature and 823 K are presented for a series of films synthesized with different gas phase concentrations of nitrogen and argon. One set of samples was characterized by measurements between room temperature and 823 K and a second set by two-step thermal cycling from room temperature to 573 and 823 K. It was found that with increasing nitrogen concentration (up to 0.1% N2), the resistivity slightly increased followed by a decrease at higher concentrations. Activation energies and barrier heights were in general lower for the more defective films. These results in conjunction with material characterization indicated that more defective diamond films were synthesized at higher nitrogen concentrations in the gas phase.

The integration of ferroelectrics in nanodevices requires firstly the preparation of high-quality ultrathin films. Chemical solution deposition is considered a rapid and cost-effective technique for preparing high-quality oxide films, but one that has traditionally been regarded as unsuitable, or at least challenging, for fabricating films with good properties and thickness below 100 nm. In the present work we explore the deposition of highly diluted solutions of pure and Ca-modified lead titanates to prepare ultrathin ferroelectric films, the thickness of which is controlled by the concentration of the precursor solution. The results show that we are able to obtain single crystalline phase continuous films down to 18 nm thickness, one of the lowest reported using these methods. Below that thickness, the films start to be discontinuous, which is attributed to a microstructural instability that can be controlled by an adequate tailoring of the processing conditions. The effect of the reduction of thickness on the piezoelectric behavior is studied by piezoresponse force microscopy. The results indicate that films retain a significant piezoelectric activity regardless of their low thickness, which is promising for their eventual integration in nanodevices, for example, as transducer elements in nanoelectromechanical systems.

A facile one-pot synthetic approach, using oleic acid and oleylamine as composite stabilizers combined with high-temperature treatment in 1-octadecene, has been developed for the preparation of monodisperse and uniform lanthanum phosphate and europium-doped lanthanum phosphate nanocrystals. In particular, with the present synthetic approach, the size of the resulting nanocrystals could be tuned precisely and continuously from 3.5 to 6.5 nm by seed-mediated epitaxial growth. The as-obtained uniform nanocrystals with hydrophobic surfaces, which show efficient photoluminescence, could be easily dispersed in nonpolar solvents. More importantly, these nanocrystals can also be easily modified to water-dispersed ones with hydrophilic surfaces for potential use in in vitro imaging in bioanalysis. In addition, a synthetic mechanism for these monodisperse nanocrystals is presented and discussed.

Results of an investigation of the interaction potential of synthetic and pre-treated calcium silicate hydrate (C-S-H) [with hexadecyltrimethylammonium (HDTMA)] are reported. The effective and strong interaction of these molecules with the C-S-H surface was shown using 13C and 29Si cross polarization magic angle spinning (CP MAS) nuclear magnetic resonance, x-ray diffraction, thermogravimetric analysis, scanning electron microscopy, and Fourier transform infrared spectroscopy analysis. The HDTMA–C-S-H interaction is influenced by the poorly crystallized layered structure of C-S-H. An indefinite number of layers and an irregular arrangement are confirmed by the SEM images. The position and shape of the 002 reflection of C-S-H are affected by drying procedures, chemical pre-treatment, and reaction temperature. Recovery of the initial 002 peak position after severe drying and rewetting with distilled water or interaction with HDTMA is incomplete but accompanied by an increase in intensity. It is inferred that the stability of C-S-H binders in concrete can be affected by a variation in nanostructure resulting from engineering variables such as curing temperature and use of chemical admixtures.

The thermodynamic and kinetic fragilities of two near-eutectic Mg-based bulk metallic glass (BMG)-forming liquids, Mg61Cu28Gd11 and Mg59.5Cu22.9Ag6.6Gd11, were investigated using high-precision differential scanning calorimeter (DSC). The thermodynamic fragility denoted as F3/4 was determined by evaluating the temperature dependence of the excess entropy Sex. The heating rate dependence of the relaxation time at the glass transition temperature was investigated to measure the kinetic fragility. A positive correlation between the thermodynamic and kinetic fragilities could be established in Mg-based BMG-forming liquids on the basis of Adam-Gibbs equation in contrast to a number of other BMGs.