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Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters

Published online by Cambridge University Press:  31 January 2011

J. S. Williams ,
Y. Chen ,
J. Wong-Leung ,
A. Kerr  and
M. V. Swain
J. S. Williams*
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
Y. Chen
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
A. Kerr
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
M. V. Swain
Affiliation:
CSIRO Division of Telecommunications and Industrial Physics, Lindfield, 2070, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation pressures and does not appear to undergo phase transformation on loading and unloading. Indentation of compound semiconductors is also studied and the load/unload behavior at room temperature is quite different from that of silicon. Both gallium arsenide and indium phosphide, for example, undergo slip-induced plasticity above a critical load.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2338 - 2343
Copyright
Copyright © Materials Research Society 1999

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