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Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

Published online by Cambridge University Press:  31 January 2011

W. I. Park ,
S-J. An ,
Gyu-Chul Yi  and
Hyun M. Jang
W. I. Park
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
S-J. An
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
Gyu-Chul Yi*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
Hyun M. Jang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
*
a)Address all correspondence to this author. e-mial: [email protected]
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Abstract

High-quality ZnO thin films were grown epitaxially at 250–550 °C Al2O3(00·1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 °C exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 5 , May 2001 , pp. 1358 - 1362
Copyright
Copyright © Materials Research Society 2001

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