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High-voltage Transmission Electron Microscope in situ Study on Dislocation Motion in Decagonal Al–Ni–Co Single Quasicrystals

Published online by Cambridge University Press:  01 July 2005

Martin Bartsch ,
Peter Schall ,
Michael Feuerbacher  and
Ulrich Messerschmidt
Martin Bartsch
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle (Saale), Germany
Peter Schall
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Michael Feuerbacher
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Ulrich Messerschmidt*
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle (Saale), Germany
*
b)Address all correspondence to this author. e-mail: [email protected] This author was an editor of this focus issue during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/publications/jmr/policy.html.
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Abstract

Decagonal single quasicrystals of the composition Al70Ni15Co15 have been deformed in situ in a high-voltage transmission electron microscope at 730 °C along the 10-fold periodic axis to directly observe the dislocation motion. The deformation is carried by stress-assisted climb of dislocations with periodic Burgers vectors. These dislocations may also glide and move by a combination of glide and climb. Dislocations with Burgers vectors with components in the periodic and quasiperiodic directions probably move under the action of a chemical force. The observations are interpreted by a model established by P. Schall et al. under consideration of the activation parameters of macroscopic deformation and by analogies with the behavior of icosahedral quasicrystals.

Keywords

DislocationsQuasicrystalTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 7 , July 2005 , pp. 1814 - 1824
Copyright
Copyright © Materials Research Society 2005

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References

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