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Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

Published online by Cambridge University Press:  31 January 2011

S.J. Yang ,
T.W. Kang ,
T.W. Kim  and
K.S. Chung
S.J. Yang
Affiliation:
Department of Physics, Dongguk University, 3–26, Pildong, Chungku, Seoul 100–715, Korea
T.W. Kang*
Affiliation:
Department of Physics, Dongguk University, 3–26, Pildong, Chungku, Seoul 100–715, Korea
T.W. Kim
Affiliation:
Department of Physics, Kwangwoon University, 447–1 Wolgye-dong, Nowon-ku, Seoul 139–701, Korea
K.S. Chung
Affiliation:
Department of Electronic Engineering, Kyung Hee University, Seocheon-Ri, Kilheung-Eup, Yongin-City, Kyungki-do, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Extract

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 1019 - 1023
Copyright
Copyright © Materials Research Society 2002

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