We discuss the physics of pseudomagnetic field,s which can be induced in graphene by applying strains, and show how they can be used to manipulate electronic transport through graphene heterostructures (strain engineering). We consider strain-induced pseudo-Landau levels, which were observed in graphene, and discuss the related valley quantum Hall effect. At the end of this chapter we demonstrate that a combination of strain and electric gating can open energy gap in electron spectrum of graphene which can be potentially interesting for applications.