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1 results

  • Localized Epitaxy of GaN by HVPE on patterned Substrates

  • O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS
  • Journal:
    Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
    Published online by Cambridge University Press:
    13 June 2014, e40
    Print publication:
    1998
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  • We report ongoing experiments on the growth of GaN by hydride vapor phase epitaxy (HVPE), using a newly designed Aixtron horizontal reactor. Growth was carried out on c-plane Al2O3 substrates on which a thin GaN layer had been predeposited by MOVPE and patterned using a dielectric mask. The mask pattern was designed to give information on the growth rate and morphology along different directions, and contained both a star-shaped pattern and arrays of parallel stripes of various widths and orientations. All growths were performed at atmospheric pressure and ~1050°C deposition temperature. For the range of experimental conditions investigated the maximum ratios of lateral to vertical growth velocities of around 2 and coalescence of the layer after approximately 10 μm of growth were observed for stripes oriented along the <100> direction.