With the introduction of high aspect ratio and steep geometries in deep-subquarter-micron dynamic random access memory (DRAM) device, it becomes more and more critical to understand the formation of undesired intermetallic Ti-Al phases in Al-metallization and thus better-control the profile of interconnectors. In this article, Ti-related inclusions in Metal 1 (M1) interconnecting layer (an AlCu-0.5% alloy) originated from the bottom Ti liner were characterized with an Analytical TEM. Samples were cleaved from nanometer 256Mbit dynamic random access memory DRAM devices. The TEM employed is a JEOL 2010F with a field emission gun (FEG) and running at 200KV acceleration voltage. Correlations among transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS) elemental mapping, and x-ray energy dispersive spectroscopy (XEDS) elemental linescan were established. The results here not only provide important feedbacks to semiconductor product integration and optimization, but also demonstrate the full-functionality of the start-of-the-art analytical TEM in investigations of nanometer semiconductor devices.