Owing to the development of new ion source technology, users of focused ion beams (FIBs) have access to superior performance when compared with the industry standard Ga+ liquid metal ion source. FIBs equipped with an inductively coupled plasma (ICP) ion source are better able to carry out large volume milling applications by providing up to 2 µA of Xe+ ions focused into a sub-5 µm spot. However, ICP FIBs are presently limited to 25 nm imaging resolution at 1 pA.The gas field ionization source (GFIS) relies upon an ion source that is the size of a single atom and correspondingly gains high brightness through its very small source size. The high brightness allows the GFIS to produce a very small focused probe size (<0.35 nm for helium), but with comparatively small beam currents (less than 2 pA). The Cs+ low temperature ion source, still being developed, has a projected sub-nm focal spot size at 1 pA, a maximum current of several nanoamps, and has the potential to offer integrated secondary ion mass spectrometry capabilities.

Biaxially textured magnesium oxide (MgO) templates of 10-nm thickness were successfully fabricated on glass and silicon substrates without any buffer layers using Ar+ ion beam assisted e-beam evaporation. With an additional layer of 100 nm homoepi MgO on top, the in-plane misorientation of ∼6.5° and out-of-plane misorientation of ∼2.0° have been obtained. Prior to growth, the substrates were bombarded with the same Ar+ ion beam for a certain period ranging from 5 to 35 min to provide initial substrate conditions for textured MgO formation. The ion beam induced modification of the substrate surface morphology was characterized using atomic force microscopy. Reduced surface roughness Ra from 2 to 3 nm on the original glass substrates to below 1.0 nm after 5 min ion beam bombardment was found to be an important condition for the textured MgO formation. The nearly unchanged Ra ≤ 1 nm of the silicon substrate after the ion beam bombardment, however, suggests that additional surface modification is required for the textured MgO to form.

Cubic NaCl-B1 structured multilayer TiAlN/VN with a bi-layer thickness of approximately 3 nm and atomic ratios of (Ti+Al)/V = 0.98 to 1.15 and Ti/V = 0.55 to 0.61 were deposited by unbalanced magnetron sputtering at substrate bias voltages between -75 and -150 V. In this paper, detailed transmission electron microscopy and x-ray diffraction revealed pronounced microstructure changes depending on the bias. At the bias -75 V, TiAlN/VN followed a layer growth model led by a strong (110) texture to form a T-type structure in the Thornton structure model of thin films, which resulted in a rough growth front, dense columnar structure with inter-column voids, and low compressive stress of -3.8 GPa. At higher biases, the coatings showed a typical Type-II structure following the strain energy growth model, characterized by the columnar structure, void-free column boundaries, smooth surface, a predominant (111) texture, and high residual stresses between -8 and -11.5 GPa.