The distortions present in an electron diffraction pattern can be classified into two categories: one is radially invariant and the other is angularly invariant. We report a method to compensate these displacements undergone by diffraction features promoted by any kind of artifacts generated in parallel beam electron diffraction conditions. This approach is not aimed at quantifying these distortions but only intends to aid in the measurement of lattice parameters of crystals with a significant increase of accuracy and precision as compared to previous approaches. It is based on statistical estimations of the relative positions between diffraction rings and/or spots after performing a transformation of the digitalized patterns to polar coordinates. The analytical method is based on fitting a Gaussian type profile to intensity distributions. This makes it possible to determine the lattice parameters of a polycrystal or single crystal with relative errors smaller than 0.1% for diffractograms acquired in photographic films and below 0.01% for those collected in imaging plates.
