This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the FSs and optimized driver circuits for the two GaN push-pull FSs. 3D electromagnetic simulation of output network has been conducted to extract an equivalent circuit model and to access full information in terms of functionality and broadband impedance characteristics for optimized outphasing operation in the final design. Measured total efficiencies (ηtot) of 59 and 25% at 0 and 10 dB power back-off are achieved, respectively, fitting the simulation quite well. The proposed digital outphasing module is a promising candidate for fully digitized base-station architectures in future wireless communications.

This paper reports on digital transmitter architecture for the 450 MHz band using an envelope delta-sigma modulator realized in CMOS and a voltage-mode class-S (VMCS) power amplifier (PA) based on GaN monolithic microwave integrated circuits (MMICs). The class-S PA is characterized for narrowband single-tone signals and a single- as well as a four-carrier downlink wideband code division multiple access (WCDMA) signal with a peak-to-average power ratio of 7.5 dB. Using single-tone excitation the PA shows a maximum drain efficiency of 86% and a peak output power of 4.4 W. At 6 and 10 dB back-off, 59 and 36% efficiency are achieved, respectively. With the single- and four-carrier WCDMA input signals maximum drain efficiencies of 64 and 53% are reached, respectively, and peak output power is 0.7 W. The adjacent channel leakage ratio shows values of about −34 dBc (5 MHz) and −38 dBc (10 MHz) for single-carrier WCDMA excitation. This is the first complete VMCS PA chain characterized with standard communication signals.

This work describes the integration of Schottky diodes into fast GaN MMIC process technology suitable for the realization of switch-mode power amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called third-quadrant issue, which reduces the efficiency in band pass-Δ-Σ class-S operation can be diminished on device level. Compared to a hybrid diode assembly, the broadband properties of the amplifier module with on-chip-integrated diode can be improved by the reduction of parasitic losses. The GaN heterostructure field effect transistors (HFETs) with integrated series diode show a cut-off frequency of 28 GHz with drain breakdown voltages exceeding −100 and +100 V and comparable large signal performance to conventional GaN HFETs at 10 GHz. MMIC core chips for class-D and class-S switch-mode power amplifier modules are demonstrated for the operation at mobile communication frequencies between 0.45 and 2 GHz and signal bit rates up to 8 Gbps. The circuits yield broadband output power levels between 4 and 9 W with efficiencies of up to 80%.

This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN–HEMT monolithic microwave integrated circuits (MMICs). It achieves a peak output power of 3.4 W for a single tone at 400 MHz, encoded in standard band-pass delta-sigma modulation with 1.6 Gbps sampling frequency. The corresponding efficiency is 38%, peaking at 52% for 0.5 W output power. In order to demonstrate the influence of coding efficiency, additional measurements using a periodic square-wave signal were performed (class-D operation), which yield a maximum output power of 7 W with 64% efficiency. To the author's knowledge, these are the best results in this frequency range achieved so far with the voltage-mode class-S configuration. The paper discusses behavior at power back-off and the influence of the loss mechanisms.