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1 results

  • Enhanced electroluminescence performance of all-inorganic quantum dot light-emitting diodes: A promising candidate for hole transport layer of Cu-doped NiO nanocrystals

  • Yi-Dong Zhang, Lei Zhao
  • Journal:
    Journal of Materials Research / Volume 34 / Issue 16 / 28 August 2019
    Published online by Cambridge University Press:
    29 April 2019, pp. 2757-2764
    Print publication:
    28 August 2019

  • Fabrication and characterization of solution-processed, all-inorganic quantum dots (QDs) light-emitting diodes (QLEDs) incorporating colloidal CdSe/ZnS QDs are presented. Using a simple solvothermal process, Cu-doped NiO nanocrystals were fabricated and applied as a hole transport layer in all inorganic QLEDs. Cu-doped NiO nanocrystals are ascribed to bunsenite cubic structure. The transmittance of the film is more than 81%. The hole-only devices of Au/QDs/Cu–NiO/ITO structures showed that 5% mol Cu doped NiO film obtained the largest hole current. The resulting devices show pure QD electroluminescent emissions with a maximum electroluminescence brightness of 2258 cd/m2 after doping 5% mol Cu in NiO, which is almost 4-fold compared with that of intrinsic NiO due to the enhanced carrier concentration and conductivity. The current efficiency and EQE of the assembled all-inorganic QLED exhibited the maximum values of 1.18 cd/A and 1.223%, respectively.