A synthetic cubic pyrochlore, Gd2Ti2O7 (Fd3̅m) irradiated with swift heavy ions is compared with a compositionally-related composition La2Ti2O7 (P21), which has a monoclinic, layered, perovskite-type structure. Irradiation experiments were performed at the GSI Helmholtz Center with 181Ta ions and 129Xe ions at specific energies of 11MeV/amu. At these energies the ions pass entirely through the sample thickness of ∼ 40 μm. Angle-dispersive synchrotron powder x-ray diffraction (XRD) measurements were completed and an increasing ion-induced amorphization with increasing ion fluence was for both phases. The ion track cross-sections for the radiation-induced crystalline-to-amorphous transformation, as determined from the evolution of the integrated peak intensities as a function of fluence, reveal that La2Ti2O7 (track diameter, d ∼ 7.2 nm with 181Ta and 5.1 nm with 129Xe) is more susceptible to amorphization than Gd2Ti2O7 (d ∼ 6.2 nm with 181Ta and 4.6 nm with 129Xe). The radiation response of the two titanate compounds can be understood in the context of their different structures and cation ionic radius ratios rA/rB, where the susceptibility of radiation of titanate pyrochlores is proportionate with this radius ratio. The higher electronic linear energy loss of the 181Ta ions as compared with 129Xe ions leads to a consistent increase of volume amorphized per ion in both materials, which manifests as a larger track diameter.

Flash-lamp annealing (FLA) has been investigated for the crystallization of a 60 nm amorphous silicon (a-Si) layer deposited by PECVD on display glass. Input factors to the FLA system included lamp intensity and pulse duration. Conditions required for crystallization included use of a 100 nm SiO2 capping layer, and substrate heating resulting in a surface temperature ∼ 460 °C. An irradiance threshold of ∼ 20 kW/cm2 was established, with successful crystallization achieved at a radiant exposure of 5 J/cm2, as verified using variable angle spectroscopic ellipsometry (VASE) and Raman spectroscopy. Nickel-enhanced crystallization (NEC) using FLA was also investigated, with results suggesting an increase in crystalline volume. Different combinations of furnace annealing and FLA were studied for crystallization and activation of samples implanted with boron and phosphorus. Boron activation demonstrated a favorable response to FLA, achieving a resistivity ρ < 0.01 Ω•cm. Phosphorus activation by FLA resulted in a resistivity ρ ∼ 0.03 Ω•cm.

We present results of studies of the xenon-chlorine system to 60 GPa and temperature range 300 to 2000 K. Using a combination of Raman spectroscopy, infrared spectroscopy and synchrotron x-ray diffraction; we characterize the products of diamond cell experiments. In the 2-20 GPa pressure interval, we observe the formation of a deep red crystalline phase. Above 15 GPa, and at high temperature, a solid solution of Xe and Cl2 appears to form. Comparison of the ultraviolet-visible and infrared absorption measurements on the proposed alloy of Xe and Cl2 show that band edge moves into the visible range at high pressure