Photoluminescence spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped quantum wells. Three well-resolved peaks originate from the quantum well. The theoretically calculated confinement energies have been compared to the experimental energy positions and found to be in good agreement with the data, assuming that the piezoelectric field is largely screened by the electron gas. The highest energy transition may originate from the Fermi edge, consistent with the temperature dependence of the photoluminescence. Decay times for the different transitions indicate that the photoexcited holes are localized.

In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapour phase epitaxy in a vertical rotating disk reactor is investigated. The InGaN layers grown above 800 °C are transparent and show no In-droplets on the surface. The In-content varies between 56 and 9 % for growth temperatures between 700 and 850 °C. The DC X-ray rocking curve of InGaN typically shows a FWHM between 8 and 15 arcmin. Room temperature PL shows an intense band edge emission with a FWHM between 100 and 200 meV for an In-content of 9 and 56 %. The initial efforts on QW growth are discussed.