The principle of maximum entropy is a well-known approach to produce a model for data-generating distributions. In this approach, if partial knowledge about the distribution is available in terms of a set of information constraints, then the model that maximizes entropy under these constraints is used for the inference. In this paper, we propose a new three-parameter lifetime distribution using the maximum entropy principle under the constraints on the mean and a general index. We then present some statistical properties of the new distribution, including hazard rate function, quantile function, moments, characterization, and stochastic ordering. We use the maximum likelihood estimation technique to estimate the model parameters. A Monte Carlo study is carried out to evaluate the performance of the estimation method. In order to illustrate the usefulness of the proposed model, we fit the model to three real data sets and compare its relative performance with respect to the beta generalized Weibull family.

We present a macroscopic model for describing the electrical and thermal behaviour of silicon devices. The model makes use of a set of macroscopic state variables for phonons and electrons that are moments of their respective distribution functions. The evolution equations for these variables are obtained starting from the Bloch–Boltzmann–Peierls kinetic equations for the phonon and the electron distributions, and are closed by means of the maximum entropy principle. All the main interactions between electrons and phonons, the scattering of electrons with impurities, as well as the scattering of phonons among themselves are considered. In particular, we propose a treatment of the optical phonon decay directly based on the expression of its transition rate (Klemens 1966Phys. Rev.148 845; Aksamija & Ravaioli 2010Appl. Phys. Lett.96, 091911). As an application of the model, we evaluate the silicon thermopower.

We present the first macroscopical model for charge transport in compound semiconductors to make use of analytic ellipsoidal approximations for the energy dispersion relationships in the neighbours of the lowest minima of the conduction bands. The model considers the main scattering mechanisms charges undergo in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk 4H and 6H-SiC.

This paper presents an algorithmic analysis of the busy period for the M/M/c queueing system. By setting the busy period equal to the time interval during which at least one server is busy, we develop a first step analysis which gives the Laplace-Stieltjes transform of the busy period as the solution of a finite system of linear equations. This approach is useful in obtaining a suitable recursive procedure for computing the moments of the length of a busy period and the number of customers served during it. The maximum entropy formalism is then used to analyse what is the influence of a given set of moments on the distribution of the busy period and to estimate the true busy period distribution. Our study supplements a recent work of Daley and Servi (1998) and other studies where the busy period of a multiserver queue follows a different definition, i.e., a busy period is the time interval during which all servers are engaged.