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Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e42
- Print publication:
- 1996
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- Article
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In N-rich growth conditions, prismatic domains were formed in the initial stage of a cyclotron assisted MBE of GaN over 6H-SiC (0001). They exhibit {10
0} facets and are either voids or amorphous phase. Their density is of a few 109 cm−2 and they are located in a 50 nm layer closest to the substrate surface.
0} facets and are either voids or amorphous phase. Their density is of a few 10