This study analyzed the effects of the day of trophectoderm (TE) biopsy and blastocyst grade on clinical and neonatal outcomes. The results showed that the implantation and live birth rates of day 5 (D5) TE biopsy were significantly higher compared with those of D6 TE biopsy. The miscarriage rate of the former was lower than that of the latter, but there was no statistically significant difference. Higher quality blastocysts can achieve better implantation and live birth rates. Among good quality blastocysts, the implantation and live birth rates of D5 and D6 TE biopsy were not significantly different. Among fair quality and poor quality blastocysts, the implantation and live birth rates of D5 TE biopsy were significantly higher compared with those of D6 TE biopsy. Neither blastocyst grade nor the day of TE biopsy significantly affected the miscarriage rate. Neonatal outcomes, including newborn sex, gestational age, preterm birth, birth weight and low birth weight in the D5 and D6 TE biopsies were not significantly different. Both blastocyst grade and the day of TE biopsy must be considered at the same time when performing preimplantation genetic testing–frozen embryo transfer.

This article features the importance of nanomaterial–protein interfaces, with a special interest on two-dimensional (2D) nanomaterials, for next generation sensors and electronics. Graphene, the first isolated and studied 2D nanomaterial, is taken as the material of most interest and then focused on its engineering by heteroatom doping. The success of graphene engineering for sensors widened the search for better and efficient biosensor platforms of other layered materials such as boron nitride and transition metal dichalcogenides. But functionalization of 2D backbones with biomolecules often ends up with the disruption of the biological activities due to various reasons. This has to be fundamentally studied and corrected for the clinical implementation of these materials based novel sensing platforms in point-of-care devices and micro-fluidic chips. At the end, importance of various 2D materials–biomolecule interfaces is discussed, and MoS2 based label-free biosensor is highlighted. A method for the modification of MoS2–biomolecule interaction via covalent functionalization of oxygen functionalities in MoS2 is also proposed.

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

The rapid advance and falling costs of computing power and data storage during the last 40 years have greatly enhanced the data reduction speed and analytical capacity of energy dispersive spectroscopy (EDS) systems. At the same time, the solid state X-ray detector [until recently, the Si(Li) diode] has seen performance increases due to the use of advanced materials and processing techniques. In addition, the performance of the electronic components (field effect transistor, preamp, and pulse processor) of an EDS system has been constantly improved. These technology advances have resulted in improved spectral quality, excellent light element detection, and increased count rate performance. The results have been truly remarkable and driven by the needs of the analyst. This article will summarize the progress made in these areas in the last 40 years and make a brief reference to prospects for future development in EDS system performance.

Initial results on 0.25 μm gate MODFET's have yielded ft=21.4 GHz and fmax=77.5 GHz. These devices have characteristics that agree with the gradual channel model dominated by the electron mobility. The AlGaN/GaN structure, grown on sapphire substrates, are polycrystalline, and thus yield low mobility (<100cm2/Vs) at low electron sheet density. Using a simple model, design optimization predicts electron sheet density values of 7.3 × 1012 cm−2 in thin, 3 nm quantum wells for single-sided doping with 5 nm spacer for use in future high frequency Al0.4Ga0.6N/In0.25Ga0.75N/GaN MODFET's with gate lengths of 0.10 μm. Double sided doping with 5 nm spacers would yield a sheet density of 1.4 × 1013cm−2 in such 3 nm quantum wells.