This work demonstrates the possibility of using the Duane–Hunt
limit of the bremsstrahlung to determine E2 values
of Si3N4 and AlN ceramics. The
EDHL versus E0 graph
demonstrates that for conductive materials, the experimental curve is
parallel to the theoretical (EDHL =
E0), but both curves cross in the case of
insulators. The intersection points (E2 value), are
3.01 keV for Si3N4 and 2.67 keV for AlN. Imaging
of ceramic grain structure at high magnification was performed to
demonstrate the validity of the calculated E2
values.
