The unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.

Pin/pin “micromorph” tandem solar cells were manufactured by the industrial production line of Hunan Gongchuang PV Science & Technology Co., Ltd. Based on this kind of solar cells, a n-doped amorphous silicon layer deposited by plasma enhanced chemical vapor deposition technique (PECVD) was inserted between the microcrystalline silicon intrinsic layer and n-doped layer. The result showed that the introduced n-type amorphous silicon layer well improved the solar cells performance by reducing the bad effects caused by microcrystalline silicon growth defects. Compared with the solar cells without inserting the n-doped amorphous silicon layer, the open voltage and efficiency increased remarkably. When the thickness of n-doped amorphous silicon layer is 8nm, the open voltage increased from 72.9V to 73.6V and efficiency increased from 10.63% to 10.74%.

Photovoltaic (PV) systems are progressively used for decentralized electricity generation. To obtain the maximum yield from such systems, optimisation of all components is essential. In this contribution, we provide a comprehensive modelling and sizing of PV systems for any location. Three applications are here presented providing real time monitoring of PV potential, accurate prediction of yield taking into account thermodynamic temperature effects, optimization of modules orientation addressing the effects of shading and efficient sizing of inverter for a higher yield output. When combined, these models can accurately predict the real time performance of any PV system.

The a-Si/c-Si Heterojunction Technology (HJT) or Heterojunction with intrinsic thin layer (HIT) solar cell have been fabricated in mass production，the average conversion efficiency of HJT solar cells with 3 bus bar, 5 bus bar and smart wire structures have reached 20%, 21% and 22% respectively. One of the biggest obstructions for HIT module manufacturing is the Cell-to-Module (CTM) stringing process where much power loss happened due to high temperature. The higher temperature in stringing process makes passivation quality worse and introduces much more defects. In this article, we present our investigation on CTM string connection methods, especially on which undergo low temperature to avoid thermal micro damage on cell’s functional structure. Several kinds of string connection are elaborated. The discussion will give some directions for further laboratory research and HJT manufacturing.

The Australian Centre for Advanced Photovoltaics (ACAP) co-ordinates the activities of the six Australian research institutions and a group of industrial partners in the Australia-US Institute for Advanced Photovoltaics (AUSIAPV) to develop the next generations of photovoltaic device technology and to provide a pipeline of opportunities for performance increase and cost reduction. AUSIAPV links ACAP with US-based partners. These national and international research collaborations provide a pathway for highly visible, structured photovoltaic research collaboration between Australian and US researchers, institutes and agencies with significant joint programs based on the clear synergies between the participating organizations. The research program is organized in five collaborative Program Packages (PPs). PP1 deals with silicon wafer-based cells, focusing on three main areas: cells from solar grade silicon, rear contact and silicon-based tandem cells. PP2 involves research into a range of organic solar cells, organic/inorganic hybrid cells, "earth abundant" thin-film materials and "third generation" approaches. PP3 is concerned with optics and characterization. PP4 will deliver a substantiated methodology for assessing manufacturing costs of the different technologies and PP5 involves education, training and outreach. The main research topics, results and plans for the future are presented.

Light Emitting Diodes (LEDs) have recently gained importance in the experimental practice of photovoltaic (PV) devices. LEDs have already been proposed as the alternative to conventional xenon or halogen based solar simulators. Multi-junction PV devices use coloured LEDs in experimental tools as well: LEDs can transform a conventional solar simulator in a spectrally adjustable simulator for spectral characterization of multi-junction modules. Other useful applications include evaluating the dependence of the electrical parameters on the average photon energy and spectral responsivity measurements of multi-junction PV devices.

For increasing the awareness of photovoltaic (PV) conversion and its consumer developments, a PV-powered infotainment spot (information + entertainment) has been recently designed to be used in the campus of Delft University of Technology. This demonstrator provides information to people on campus via a rugged touchscreen that is powered only by solar energy. In this PV system, a 90-W rated flexible CIGS module was deployed as market alternative to rigid c-Si modules. A methodology to accurately estimate the irradiance on a curved plane was developed. Taking into account temperature, irradiance and shading effects, the energy production of the PV module was estimated to be 62 kWh/year. On the other hand, the load should exhibit an energy consumption of 19.3 kWh/year. By means of a 12-V DC mini grid, the excess energy was thus stored in a 120 Ah battery regulated via charge controller or made directly available with two ad-hoc USB ports for smartphone battery recharging. The realized prototype of the infotainment spot is potentially a completely autonomous small-scale PV system with zero loss of load probability.

In this work, we report on development of one-dimensional reaction-diffusion simulator needed to understand the kinetics of Cu-related metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cells has been studied in time-space domain self-consistently with free carrier transport. Resulting device performance was simulated as a function of stress time, thus showing pronounced effect that the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results presented confirm the validity and the potential of the approach presented in better understanding of the performance and metastabilities of CdTe photovoltaic devices.

The impact of nanostructured broadband antireflection (AR) coatings on solar panel performance has been projected for a broad range of panel tilt angles at various locations. AR coated films have been integrated on test panels and the short-circuit current has been measured for the entire range of panel tilts. The integration of the AR coatings resulted in an increase in short-circuit current of the panels by eliminating front sheet reflection loss for a broad spectrum of light and wide angle of light incidence. The short-circuit current enhancement is 5% for normal light incidence and approximately 20% for off-angle light incidence. The National Renewable Energy Laboratory (NREL) System Advisor Model (SAM) predicts that this AR coating can yield at least 6.5% improvement in solar panel annual power output. The greatest enhancement, approximately 14%, is predicted for vertical panels. The AR coating’s contributions to vertical mount panels and building-integrated solar panels are significant. This nanostructured broadband AR coating thus has the potential to lower the cost per watt of photovoltaic solar energy.

Two-step growth method of low pressure chemical vapor deposition(LPCVD) process was employed to fabricate the ZnO:B-TCO film; For the first layer, the seed layer with a heavy doping concentration was deposited on the glass substrate, the film having higher deposition rate were then grown on the top of the first layer; It shows that the doping situations of the seed layer play an important role in electrical and optical performance of the whole ZnO:B-TCO layer, and the combination of this two properties is optimal when the doping ratio (B2H6/DEZ) was 0.4;

Since July 2014, thirteen European metrology organizations are collaborating to address some of the main metrological challenges faced by the developments of high-efficiency III-V multi-junction solar cells (MJSC). III-V MJSC structures are made of a high number of layers, which makes a pure experimental optimization difficult and expensive; this also limits the uncertainty of cell calibration due to the complexity of their spectral response. The project is structured in three distinct parts:

1. 1) improved accuracy in materials and transport characterization for existing MJSC;

2. 2) improved accuracy and repeatability in traceable efficiency characterization for MJSC cells with three or more junctions and finally,

3. 3) metrology for advance concept such as coupling with thermoelectric, dilute nitride, quantum dots or growth on Silicon.

The encapsulation failure is a serious problem which leads to power degradation and life time reduction of silicon based thin film solar module. Therefore, the encapsulation material and related technology research and development become more and more important. This article describes some different junction box and middle foil encapsulation technology of the silicon based thin film solar module, different encapsulation materials and processes are compared and their impact on the manufacturing cost and module performance are discussed. The aim of this study is to find an appropriate solution of module encapsulation failure.

For the industrial application of silicon thin film solar cells, the current focus is on how to realize high-efficiency low-cost production process and minimize light-induced degradation effect, thus effectively reducing the balance-of-system (BOS) costs of system integration. In this paper, a brief introduction based on our development and application in this area is presented, highlighting in the achievement of some layers in a-Si:H/μc-Si:H tandem solar cell by optimizing the property of single layers, such as amorphous intrinsic layer, intermediate reflective layer and microcrystalline intrinsic layer. After transferring the process achievement to the industrial production line, we obtained the low-cost thin-film silicon solar cells with high photovoltaic conversion efficiency of 10.2%.

In current transparent Si based photovoltaic (PV) module fabrication, green or infrared laser is the most common used band frequency to wipe off the silicon and back contact layer in perpendicular direction of cells. However, this method would result in more power loss than calculation value due to the side effects during the process such as constructional damage of module and shunt effect. A new method is presented here which focus on wiping off more silicon layer by employing green pulsed laser(532 nm wavelength) along the parallel direction of Pattern2, and it shows higher efficiency and more attractive appearance.

Thermo-camera is employed here to analyze kinds of quality abnormal and improve production process during manufacture procedure of silicon-based thin-film solar modules. It shows that thermo-camera device can help engineers to solve problem of production line quickly and accurately, and save the manpower and financial resources at the same time.

We carried out theoretical calculation for Cu(In,Ga)Se2 (CIGS) solar cells with energy bandgap of 1.4 eV assuming formation of a Cu-poor layer on the surface of CIGS films. This calculation result revealed that formation of a thinner Cu-poor layer such as a few nanometers leads to improvement of the solar cells performance. This is because interfacial recombination was suppressed due to repelling holes from the interface by valence band offset (ΔEV). Next, we investigated composition distribution in the cross section of CIGS solar cells with Ga contents of 30% and 70% by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDX). It was revealed that the Cu-poor layer was formed on the surface and at the grain boundary (GB) in the case of conversion efficiency (η) of 17.3%, although it was not formed in the case of lower η of 13.8% for a Ga content of 30%. These results indicate that formation of the Cu-poor layer contributed to improvement of cell performance by suppression of carrier recombination. Moreover, it was also confirmed that although the Cu-poor layer was observed on the surface, it was not observed at the GB in the case of CIGS solar cells with a Ga content of 70% which had η of 12.7%. It is thought that the effect of repelling holes by ΔEV is not obtained at the GB and the solar cell performance in the Ga content of 70% is lower than that in the Ga content of 30%. Thus, we suggest importance of the Cu-poor layer at the GB for high efficiency of CIGS solar cells with high Ga contents.

The addition of a CdMgTe (CMT) layer at the back of a CdTe solar cell should improve its performance by reflecting both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cell’s current, and reduction of forward current will increase its voltage. To achieve electron reflection, conformal CMT layers were deposited at the back of CdTe cells, and a variety of measurements including performance curves, transmission electron microscopy, x-ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed. Oxidation of magnesium in the CMT layer was addressed by adding a CdTe capping layer. MgCl2 passivation was substituted for CdCl2 in some cases, but little difference was seen.

The long-wavelength quantum efficiency (QE) response of photovoltaic absorbers is determined by the length scales for minority carrier collection. However, extracting quantitative measurements of minority carrier mobility-lifetime product (μτ) is complicated by uncertainty in other factors such as the depletion width, electric field, and the absorption coefficient. We apply previously developed methods to obtain estimates for μτ in a tin(II) sulfide (SnS) solar cell. We compare three analytic models for the minority carrier collection probability as a function of absorber depth to determine which model most accurately captures the behavior in our devices. For models in which multiple parameters are unconstrained, a random numerical search is used to optimize the fit to experimental QE for SnS. To identify sources of error, we perform a sensitivity analysis by fitting with SCAPS-1D. Our analysis shows that changes in absorption most strongly affect estimates for μτ, highlighting the need to obtain accurate, device-specific absorption data. Further modeling and experimental constraints are required to obtain self-consistent values for μτ that correspond to actual device performance.

Flexible copper indium gallium diselenide (CIGS) solar cells on lightweight substrates can deliver high specific powers. Flexible lightweight CIGS solar cells are also primary candidates for building-integrated panels. In all applications, CIGS cells can greatly benefit from the application of broadband and wide-angle AR coating technology. The AR coatings can significantly improve the transmittance of light over the entire CIGS absorption band spectrum. Increased short-circuit current has been observed after integrating AR coated films onto baseline solar panels. NREL’s System Advisor Model (SAM) has predicted up to 14% higher annual power output on AR integrated vertical or building-integrated panels. The combination of lightweight flexible substrates and advanced device designs employing nanostructured optical coatings together have the potential to achieve flexible CIGS modules with enhanced efficiencies and specific power.

Monoclinic Cu2SnS3 was made by solution based processing of the precursor metals after which the samples are annealed in a sulphur environment. XRD and Raman spectra shows that the monoclinic phase was synthesised. One sample was further etched in KCN and HCl to remove possible secondary phases. Transmission spectra show that the material has two optical transitions and in conjunction with reflection data absorption spectra were calculated. The two optical transitions are determined to be 0.91 and 0.98 for the unetched sample and 0.90 and 0.95 eV for the etched sample. The values of the optical transitions are within the error the same and thus etching does not affect the values of these optical transitions. Photoluminescence spectra map show only one luminescence peak with a maximum at 0.95 eV, which is consistent with the values found by absorption spectra. This in combination with the Raman spectra and XRD indicates that the sample contains only one polymorph of Cu2SnS3, which is monoclinic. Therefore the two optical transitions are intrinsic to monoclinic Cu2SnS3.